| 학회 |
한국재료학회 |
| 학술대회 |
2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 |
15권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
매립형 저항체를 위한 SiOx-Pt 박막 저항체의 형성 및 그 특성 분석. |
| 초록 |
In this study, SiO-Pt nano-composite cermets were developed to control the resitivity and temperature coefficients of resistance (TCR) of embedded thin film resistors. The SiO–Pt nano-composite was prepared by the co-sputtering of a SiOx target and Pt chips onto glass. The experiments were conducted Pt concentrations in order to find the optimum conditions to achieve a high resistivity and low TCR. The electrical properties of the sputtered SiO-Pt thin films were investigated by probe station and their crystal structures were observed by X-Ray Diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS). The surface morphology was observed by field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HR-TEM). It was found that the Pt particles with a size of 3 ~ 5 nm were uniformly dispersed in the SiO matrix. A stable resistivity value of 26000 ~ 57000 μΩ•cm and TCR value of -197 ~ -322 ppm/K were obtained at 3.5 ~ 3.7 at. % Pt. |
| 저자 |
임승규, 김태성, 김진수, 나성훈, 김종천, 장재권, 서수정
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| 소속 |
성균관대 |
| 키워드 |
resistor; embedded passive; thin film resistor
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| E-Mail |
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