| 학회 |
한국공업화학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 제주국제컨벤션센터(ICC JEJU)) |
| 권호 |
23권 2호 |
| 발표분야 |
포스터_에너지저장·변환 |
| 제목 |
Influence of Hydrogen on Ternary MgZrNx Thin Films Deposited by Combinatorial Sputtering |
| 초록 |
Nitride materials have been widely used in optoelectronic applications such as light emitting diodes (LED) or as coatings and diffusion barriers in semiconducting industries; however, there is almost no study of photovoltaic devices based on nitride regarldess of their remarkable properties. Espcially, ternary nitrides with transition metals have been reported to posses a high dieletric constant which is favorable for photovoltaic applications. In this study, MgZrNx thin films were deposited by a high-throughput combinatorial sputtering technique. Only a few studies on the material properties of these ternary nitrides have been reported. Using a high-throughput analysis, we studied their optoelectronic, electrical, and optical properties as a function of the compositional (or cationic/anionic) ratio. Furthermore, we incorporated hydrogen to MgZrNx thin films as a passivation means. |
| 저자 |
김제경1, Sage R. Bauers2, Imran S. Khan2, 박보인1, Kevin R. Talley2, John Perkins2, 김대한1, Andriy Zakutayev2, 신병하1
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| 소속 |
1한국과학기술원, 2National Renewable Energy Laboratory |
| 키워드 |
combinatorial synthesis; nitride; MgZrNx; passivation
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| E-Mail |
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