| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Formation of Air Void on Patterned Sapphire Substrate for High Light Extraction Efficiency. |
| 초록 | Recently, the patterned sapphire substrate (PSS) method is being used in manufacturing industries because of the enhancement of the internal quantum efficiency (IQE) and the light extraction efficiency (LEE) by decreasing the threading dislocation density (TD) and improving photon scattering. However, air void structure in LEDs has been also studied as means to increase IQE and LEE for high efficiency optoelectronic device. Although most of LEDs with air void have been made using an additional crystallographic wet etching process, excessive wet etching process can result in epitaxial growth problem including surface pits and a rough surface. In this study, to improve the light extraction efficiency of light emitting diodes, we investigate two growth methods that form an air void on PSS without wet etching process by using GaN and AlN. One of two growth methods to build up air void is to only grow GaN on lens of PSS. Although GaN was deposited on n-like plane of PSS lens and small air void structure can be produced, GaN cannot be merged. However by using photoresist and AlN support layer, air void can successfully be built up. |
| 저자 | 박준성, 김대식, 정우섭, 조승희, 고현아, 변동진 |
| 소속 | 고려대 |
| 키워드 | <P>GaN; AlN; air void; patterned sapphire substrate; MOCVD; sputter</P> |
