| 초록 |
Graphene is an interesting material because it has remarkable properties such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young’s modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single-layer growth of single- and few-layer graphene is possible by using transition metals via thermal CVD process. In this study, we utilized polystyrene and boron oxide for synthesis of pristine graphene and boron doped graphene. Raman spectra of boron doped graphene was shifted to right compared with pristine graphene and the crystal quality of boron doped graphene was recovered when the synthesis time was 15 min. Sheet resistance decreased as increasing the synthesis time of the boron doped graphene. |
