| 학회 |
한국재료학회 |
| 학술대회 |
2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 |
18권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Studies on effect of heating rates on the properties of Cu2ZnSnS4 (CZTS) thin films by sulfurization of stacked precursor thin films |
| 초록 |
Cu2ZnSnS4 (CZTS) thin films were prepared on Mo coated glass substrates using stacked precursors deposited by sputtering method. The stacked precursor thin films were prepared from Cu, SnS2 and ZnS targets at room temperature and stacked precursor`s order was Cu/SnS2/ZnS/Mo/glass. The stacked precursor thin films were sulfurized using a commercial furnace system in the mixed N2 (95 %) + H2S (5 %) atmosphere at 580 oC for 2hours with different heating rates from 3 oC to 60 oC. The effects of different heating rates on the structural, morphological, chemical and optical properties of CZTS thin films were investigated. XRD and Raman studies showed that the sufurized thin films were synthesized the tetragonal kesterite phase with secondary phases (Cu2-xS) regardless of heating rates. FE-SEM images showed that the CZTS thin films with low heating rates of 3 oC and 5 oC had many voids while microstructure of CZTS thin films were denser with increasing heating rates. The absorption coefficient of CZTS thin films were over 104 cm-1 in the visible region. The direct band gap energies of CZTS thin films varied from 1.3 eV to 1.55 eV. |
| 저자 |
Seung Wook Shin1, Jun Hee Han1, Jae Ho Yun2, Jong Ha Moon3, Jin Hyeok Kim3, Jeong Yong Lee1
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| 소속 |
1KAIST, 2에너지 기술원, 3전남대 |
| 키워드 |
Cu2ZnSnS4 (CZTS) absorber; Stacked precursor thin films; Sulfurization; heating rate; Thin film solar cells (TFSC)
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| E-Mail |
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