| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
A. Information and Sensor Materials(정보소재 및 센서) |
| 제목 |
Atomic layer deposition of nitrogen doped ZnO and application for highly sensitive coreshell nanowire photo detector |
| 초록 |
We investigated the atomic layer deposition (ALD) process for nitrogen doped ZnO and the application for n-ZnO:N/p-Si(NW) coaxial hetero-junction photodetectors. ALD ZnO:N was deposited using diethylzinc (DEZ) and diluted NH4OH at 150 °C of substrate temperature. About 100~300 nm diameter and 5 um length of Si nanowires array were prepared using electroless etching technique in 0.108 g of AgNO3 melted 20 ml HF liquid at 75 °C. TEM images showed ZnO were deposited on densely packed SiNW structure achieving extraordinary conformality. When UV (360 nm) light was illuminated on n-ZnO:N/p-SiNW, I-V curve showed about three times larger photocurrent generation than film structure at 10 V reverse bias. Especially, at 660 nm wave length, the coaxial structure has 90.8 % of external quantum efficiency (EQE) and 0.573 A/W of responsivity. |
| 저자 |
정한얼1, 강혜민1, 천태훈2, 김수현2, 김도영1, 김형준1
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| 소속 |
1연세대, 2영남대 |
| 키워드 |
ZnO; Photo detector; nitrogen doped ZnO; ALD
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| E-Mail |
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