| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
A. Information and Sensor Materials(정보소재 및 센서) |
| 제목 |
The effect of device size on the resistive switching properties in MnO2 thin film |
| 초록 |
There is an increasing demand for next-generation nonvolatile memory devices because current flash memory technologies are approaching their maximum scaling limit. Among many candidates for the alternative of flash memory, resistive random access memory (ReRAM) has attracted considerable attention owing to its simple structure, non-destructive read-out property, fast switching speed, low power consumption, and excellent scalability. We reported the memory characteristics of Ti/MnO2/Pt devices and a possible mechanism, where bipolar resistive switching in an active layer was governed mainly by redox reactions at the interface between the Ti top electrode and MnO2 layer due to the migration of nonlattice oxygen ions. In this study, we investigate the effect of device size on the resistive switching properties in MnO2 thin film. As compared to large-area devices, nano-scale devices exhibit better device performances such as improved switching uniformity, reset current reduction up to 120㎂, and stable endurance characteristics up to 105 cycles. |
| 저자 |
Sun Young Choi1, Sangsig Kim2, Jeon-Kook Lee3
|
| 소속 |
1Future Convergence Technology Research Division, 2Korea Institute of Science and Technology, 3Department of Electrical Engineering and Institute for Nano Science |
| 키워드 |
resistive switching; ReRAM; MnO2; nano-scale devices
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| E-Mail |
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