| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | Effect of microwave irradiation on electrical and optical properties of ZnO thin films grown by atomic layer deposition |
| 초록 | Zinc oxide (ZnO) is one of metal oxide semiconductors for many applications such as transparent electrodes, field effect transistors, photovoltaics, gas sensors, catalysts, and solar cells due to its excellent electrical, optical, and chemical properties. ZnO is a highly transparent semiconductor due to its wide band gap of 3.37 eV and highly conductive with high carrier concentration. In recent industry, transparent electrode has been required in accordance with needs of applications to transparent displays and solar cells. The most representative material used as a transparent electrode is indium tin oxide (ITO). ITO has a high transmittance, high infrared reflectance, good electrical conductivity, and excellent substrate adherence. Some disadvantages of ITO thin films exist, however, which are an exhaustion of natural resource of indium and its cost. Recently, ZnO is an attractive alternative for ITO due to its limitations. As ZnO is a binary compound semiconductor, however, ZnO has a low carrier concentration. To overcome the limitation of ZnO thin films, microwave irradiation is used. Microwave irradiation is an easy and inexpensive process, and has enough energy to break the Zn – O bonds which can generate oxygen vacancies. As the oxygen vacancies can act as electron donors, ZnO thin films can be more conductive. In this study, we deposited ZnO thin films by atomic layer deposition (ALD) and performed the microwave irradiation process to as-deposited ZnO thin films. In order to investigate the optical and electrical properties of microwave irradiated ZnO thin films, ultraviolet-visible spectroscopy (UV–vis) and Hall measurement were used. To investigate the crystallinity of microwave irradiated ZnO thin films, X-ray diffraction was used. Moreover, to analyze the decrease of oxygen contents, X-ray photoelectron spectroscopy (XPS) was used. |
| 저자 | Hyunwoo Yuk1, Hyeongsu Choi2, Namgue Lee1, Hyunwoo Park2, Yeonsik Choi3, Junghoon Lee2, Hyeongtag Jeon1 |
| 소속 | 1Division of Materials Science and Engineering, 2Hanyang Univ., 3Department of Nano-scale Semiconductor Engineering |
| 키워드 | Zinc oxide; Transparent conducting oxide; Microwave irradiation; Atomic layer deposition; Electrical and optical properties |
