| 초록 |
In this research, mixed hole inejction layer of n-type semiconducting material N,N-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI) and p-type electron donating copper phthalocyanine(CuPc) is applied on ITO anode. By investigating hole only device models which have structure of ITO/CuPc:PTCDI (15nm)/NPB(100nm)/Al(150nm), remarkable enhancement of hole injection is observed. In addition, optical and electrical properties of device which is consisted of ITO/CuPc:PTCDI/NPB/Alq3/LiF/Al are tested as compared to the conventional CuPc:PTCDI hole injection structure devices. And they show better performances. Dependency of doping ratio of PTCDI:CuPc and film thickness are investigated and the optical and morphological properties of CuPc:PTCDI mixed layer are also tested with UV/Vis spectrometer and AFM respectively in order to conform the enhancing mechanism. |
