| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Effect of Buffer Layer and Barrier on Bistability for Non-volatile Memory Fabricated with Al nano-crystals Embedded in α-NPB |
| 초록 | Organic bistable devices (OBD) are a promising non-volatile memory with the integration density of Tera-bits. We developed a new organic non-volatile memory fabricated with the device structure of Al/α-NPB/Al nano-crystals surrounded by amorphous Al2O3/α-NPB/Al using O2 plasma oxidation. I-V characteristics of the OBDs obtained by sweeping the voltage from 0 to 10V. The results demonstrated the threshold (Vth), program (Vp), and erase (Ve) voltage were about 3, 4.5, and 6.2V, respectively and the conduction current bistability is ＞1x102. The voltage between Vp and Ve is a region of negative differential resistance (NDR). In this work, we studied effect of buffer layer and barrier on bistability for non-volatile memory. By adding buffer layer, the OBD's conduction current was increased and bistability was enhanced. In particular, NDR region was more wide and larger value. In contrast, the OBDs added barrier had lower conduction current and smaller NDR. *This research was supported by Korea ministry of commerce, industry and energy for the 0.1 Terabit Non-volatile Memory Development. |
| 저자 | Jae-Seok Kim1, Woo-Sik Nam2, Jea-Gun Park1 |
| 소속 | 1Nano SOI Process Laboratory, 2Hanyang Univ. |
| 키워드 | non-volatile memory; bistability; organic bistable device |
