| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 반도체 재료 |
| 제목 | Current conduction mechanism of non-volatile memory fabricated with Au nano-crystal embedded in poly(N-vinylcarbazole) layer |
| 초록 | Recently, organic non-volatile memories have been developed as a next generation of non-volatile memory because of nano-meter device-feature size and nano-second access and store-time. Memory effect in organic molecules is based on electrical bi-stability of the materials and the bi-stable phenomenon is observed in poly(N-vinylcarbazole) layer containing many small discrete Au islands. For the current conduction, at low field, it is followed thermally activated charge transfer. And, at high field, the space-charge field due to the stored charge in Au islands inhibits further charge injection from the electrodes so that we can find a negative-differential resistance. So, we’ll show that the switching phenomenon observed in the device conforms to the thermal activation and charge storage mechanism. Acknowledgement *This research was supported by Korea ministry of commerce industry and energy for the 0.1 Terabit Non-volatile Memory Development. |
| 저자 | Byeong-il Han1, Chang Kyu Lee2, Jea-Gun Park1 |
| 소속 | 1Nano SOI Process Laboratory, 2Hanyang Univ. |
| 키워드 | Organic memory; Au nano-crystal; poly(N-vinylcarbazole) |
