| 학회 | 한국재료학회 |
| 학술대회 | 2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 | 13권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | The Effects of Argon Gas flow on the Czochralski Silicon Crystal Growth by Numerical Simulation |
| 초록 | Silicon wafers used in the microelectronics devices are largely fabricated by Czochralski methods. The silicon single crystal quality necessitated a improvement of growing process by Industrial requirements. To understanding of physical phenomena affecting the silicon crystal is important. In this work, we considered the effects of the argon gas flow on the Czchralski silicon crystal growth. The effects of gas flow on the heat transport, melt convection, and melt/crystal interface shape were investigated by numerical simulations. The temperature distribution in a Czochralski furnace is calculated by global heat transfer analysis. We have compared the distribution of the temperature gradient (G) and the difference of temperature gradient between the ingot center and edge (ΔG) with experimental results and simulation results. Based on the results, we calculated the distribution of G and ΔG depending on the flow rate. We confirmed that the argon gas flow affected the distribution of G and ΔG. *This work was financially supported by Korea Ministry of Science & Technology through the NRL program. |
| 저자 | In-Ji Lee1, Gon-Sub Lee2, Min-Jeong Kim1, Ungyu Paik2, Jea-Gun Park1 |
| 소속 | 1Nano SOI Process Laboratory, 2Hanyang Univ. |
| 키워드 | Gas flow; Czochralski; Silicon; Crystal Growth |
