| 학회 | 한국재료학회 |
| 학술대회 | 2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 | 16권 1호 |
| 발표분야 | C. Energy and the Environment(에너지 및 환경재료) |
| 제목 | Effect of annealing method on the characteristics of Cu2ZnSnS4 thin films prepared by sulfurizing the precursors deposited using co-sputtering method. |
| 초록 | The effect of annealing method on the optical, morphological, and crystal structural properties of Cu2ZnSnS4 (CZTS) thin films prepared by sputtering and sulfurization process has been investigated. Two different methods of rapid thermal annealing (RTA) and furnace annealing (FA) were introduced to sulfurize the CZTS precursors prepared by co-sputtering of Cu, ZnS, and Sn targets simultaneously and then sulfurizing the precursor at temperature ranges between 400 oC and 500 oC in N2 + H2S (5%) atmosphere. Structural, optical, and morphological characteristics of CZTS were investigated using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive studies (EDS), UV-visible spectroscopy and X-ray photoelectron spectroscopy (XPS). XRD results showed that the pure polycrystalline CZTS films with peaks from (002), (112), (200), (220) and (312) planes were formed after sulfurization process. SEM results showed that the grain-size of CZTS varies from 1 to 5um depending on the sulfurization processes. The optical bandgap of CZTS films was measured to be in the range of 1.4~1.6 eV. More details will be discussed in the presentation. |
| 저자 | Jin A Kim, Jong Ha Moon, Jin Hyeok Kim |
| 소속 | Chonnam National Univ. |
| 키워드 | Cu2ZnSnS4 (CZTS) thin films; rapid thermal annealing (RTA); co-sputter; absorber layer; thin film solar cell; sulfurization |
