| 초록 |
Recently, patterning of self-assembled monolayers (SAMs) of various functional molecules has been studied to integrate many small devices in an efficient way and tune device operation with fine control capability. In this presentation, we demonstrate the fabrication of solution-processed metal-oxide transistors and their operation with electrolyte-gated mode modulated by the patterned SAMs at the semiconductor-dielectric interface. Metal-oxide semiconductor film is formed on the highly-doped n-type silicon substrate by using sol-gel method and deposition of various alkyl silane or phosphonic acid SAMSs is followed. Subsequently, the openings of SAM interlayer is patterned by photochemical desorption of organic layers and, thereby, formation of local hydrophilic regions. We show that metal-oxide transistor characteristics are modulated by controlling the chemical nature of photo-patterned molecules and open interfacial area of active channel region. |
