| 학회 | 한국화학공학회 |
| 학술대회 | 2007년 봄 (04/19 ~ 04/20, 울산 롯데호텔) |
| 권호 | 13권 1호, p.969 |
| 발표분야 | 재료 |
| 제목 | Deposition of GaN Epitaxy Using Ga(mDTC)3 |
| 초록 | The tris(N, N-dimethyldithiocarbamato)-gallium(III) (Ga(mDTC)3) was investigated in this study as a precursor material for gallium nitride thin film deposition. The Ga(mDTC)3 was synthesized by reacting Ga(NO3)3·xH2O and sodium N, N-dimethyldithiocarbamate dihydrate (TCI) in methanol, followed by recrystallization in chloroform. The GaN thin film was deposited by hot-wall VPE technique, where TMGa, HCl and NH3 were used as gas source precursors. The prepared Ga(mDTC)3 precursor solution at fixed concentration was spin-coated on the cleaned substrate, and then the substrate was loaded into the Hot wall reactor for the growth of GaN thin film. The results showed that this method produces high-crystallinity GaN thin films at relatively lower deposition temperature. The optimal growth temperature was found to be 850 °C, and the optimal z-position was determined to be in the range of 12.5 to 15 cm. ACKNOWLEDGEMENTS This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, project #D00199) and the BK21 Display Materials and Process Engineering Program at Yeungnam University. |
| 저자 | 김도훈, 윤덕선, 움메 파바, 정우식, 박진호 |
| 소속 | 영남대 |
| 키워드 | GaN Epitaxy; Ga(mDTC)3 Precursor; Vapor Phase Epitaxy(VPE) |
| 원문파일 | 초록 보기 |
