초록 |
We report significantly enhanced field-effect mobility of poly(3-hexylthiophene) (P3HT) by introducing boron-doped multi-walled carbon nanotubes (B-CNTs). Since B-CNTs have an electrostatic repulsion with neighboring B-CNTs, they can be homogeneously dispersed in solution and semiconducting layer, while undoped CNTs tend to be gathered forming undesired aggregates. In addition, because B-CNTs have excellent hole-selective transport property, they can further facilitate hole transport than undoped CNTs. In this work, organic field effect transistors (FETs) comprising a P3HT/B-CNT composite layer show high field-effect mobility of 0.05 cm2/V∙s, which is almost 20-fold greater than that of the pure P3HT FET (2.9 × 10-3 cm2/V∙s), and 4-fold greater than that of the P3HT/undoped CNT FET, respectively. This fact implies that the homogeneously dispersed B-CNTs in polymer matrix act as selective conduction bridges. |