| 학회 |
한국재료학회 |
| 학술대회 |
2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 |
18권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 |
Antireflective ZTO/Ag bilayer-based transparent source and drain electrodes for highly transparent thin film transistors |
| 초록 |
We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes. |
| 저자 |
최광혁, 김한기
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| 소속 |
경희대 |
| 키워드 |
ZnSnO semiconductor; transparent thin film transistor; Source and drain electrodes
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| E-Mail |
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