| 초록 |
Near-infraredorganic photodetectors (NIR OPDs) are being studied as next-generationoptoelectrical devices due to their low manufacturing cost, light weight, andeasy of manufacturing using a solution process. Sensitive detection of NIR light has many importantapplications in research and industry. Dark current is the most importantparameter to determine detectivity of NIR OPDs. In this study, we havedemonstrated non-fullerene acceptor (NFA) based NIR OPDs with a reduced darkcurrent by using carrier blocking layers (CBLs) to mitigate the reverse chargeinjection. We use PTB7-Th for donor of active layer, and IEICO-4F for acceptorof active layer. Compared to a device without CBLs, the dark current waseffectively suppressed when with CBLs. Therefore, it was confirmed that detectivity increased by 5 times. Asa result, we confirmed that the dark current was effectively reduced and thedetectivity improved by using CBLs for NIR OPDs. |
