화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2006년 봄 (04/06 ~ 04/07, 일산킨텍스)
권호 31권 1호
발표분야 분자전자 부문위원회
제목 The effects of surface treatment of the SiO2 insulating layer and gold source/drain electrode on the characteristics of OTFTs
초록 The effects of surface treatment of dielectric layer and source/drain electrode in bottom contact organic thin film transistors (BC-OTFTs) have been investigated. UV-O3 , OTS, MNB treatments were employed for the purpose. BC-OTFTs were fabricated on glass wafers which were patterned using a photolithographic process. The channel length varied from 50 to 400 μm with the channel width of 1 and 2 mm.Pentacene was used the active layer. The film structure and morphology were investigated by X-ray diffraction and atomic force microscopy and I-V characteristics were measured by semiconductor parameter analyzer (Agilent 4155C).We obtained mobility , on-off ratio, threshold voltage, subthreshold slope. Contact resistances and corrected mobility were extracted using the extrapolation method of channel length, which were varied depending on the surface treatments.
저자 박노활, 장준혁, 김장주
소속 서울대
키워드 bottom contact; organic field effect transistor; Pentacene,contact resistance;
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