| 학회 |
한국화학공학회 |
| 학술대회 |
2015년 봄 (04/22 ~ 04/24, 제주 ICC) |
| 권호 |
21권 1호, p.920 |
| 발표분야 |
재료 |
| 제목 |
The Influence of Shell Thickness on the Performance of Type-I Heterostructured Quantum Dot Based Electroluminescent Devices |
| 초록 |
Quantum dot based electroluminescent devices assure the highly efficient optoelectronic application with narrow spectra in a wide range of wavelength from visible to near IR based on colloidal synthesis methods. To understand the optical properties and electronic properties of quantum dot, structural engineering of QDs and synthetic methods have been rapidly developed in the recent past. Despite a lot of effort to understand the device physics of QLEDs, several issues have been building up is still left. Here, we synthesized core/shell heterostructureCdSe/Zn1-XCdXS QDs with different shell thicknesses and tested the QDs in electroluminescent device. According to spectroscopic analysis, the non-radiative decay pathways in QDs (e.g. energy transfer, charging and non-radiative Auger recombination) are attenuated while the shell thickness increases. As a consequence of attenuation, the device efficiency and the efficiency roll-off characteristics on high current densities are enhanced. The devices contained CdSe/Zn1-XCdXS with the thickest shell present higher device efficiency and brightness than thin shell one. |
| 저자 |
정병국1, 임재훈2, 박명진3, 배완기4, 이도창1
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| 소속 |
1한국과학기술원, 2Los Alamos National Laboratory, 3서울대, 4한국과학기술(연) |
| 키워드 |
Quantum Dot; Light Emitting Devices; Heterostructure; Energy Transfer
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| E-Mail |
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| 원문파일 |
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