| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | The influence of growth temperature on SnS thin films for solar cell application |
| 초록 | Tin monosulfide(SnS) has been researched widely as a good candidate for earth-abundant photovoltaic absorber. SnS has a direct band with the bandgap of 1.2~1.5 eV and high optical absorption coefficient over 104 cm-1, which is nearly optimum for photovoltaic solar energy conversion. Even though SnS has many advantages, it is difficult to grow pure-phase SnS because of easy formation of secondary phases such as SnS2 and Sn2S3. In this research, SnS films were deposited by vapor phase deposition using SnS powder in a horizontal furnace. We changed the temperature of the SnS powder and the substrates and tried to find the optimal condition to obtain phase-pure SnS thin films. It was found that the substrate temperature influences the final phase of the deposited sulfides. More details on structural, optical, and electrical properties will be discussed in the presentation. |
| 저자 | Dongha Lim1, Jaeyeong Heo2 |
| 소속 | 1Department of Materials Science and Engineering, 2and Optoelectronics Convergence Research Center |
| 키워드 | Tin sulfide; Solar cell; Absorber; Earth-abundant |
