| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 가을 (10/11 ~ 10/12, 일산킨텍스) |
| 권호 |
32권 2호 |
| 발표분야 |
분자전자 소재 및 소자 기술(분자전자 부문위원회) |
| 제목 |
Enhanced device performance of pentacene thin film transistor with PEDOT:PSS buffer layer |
| 초록 |
Low performance of organic transistor with bottom contact configuration comes from a large contact resistance between metal and organic semiconductor (OSC). One of the major origins of the contact resistance is a large hole injection barrier between metal and OSC. In this work, we employed PEDOT:PSS acting as a buffer layer between source/drain electrodes and OSC in order to enhance device performance by reducing hole injection barrier (HIB) in pentacene thin film transistor (TFT) with bottom contact configuration. With this PEDOT:PSS buffer layer, we found out the drastically-improved performance of pentacene TFT. Also, additional experiment of in-situ ultra violet photoemission spectroscopy (UPS) was carried out to measure the HIB between pentacene and the buffer layer. From the spectra, we found out that PEDOT:PSS buffer layer decreased the HIB from 0.85 to 0.14 eV, which explains the reasoning of the enhanced device performance of pentacene TFT. |
| 저자 |
홍기표, 박찬언
|
| 소속 |
포항공과대 |
| 키워드 |
PEDOT:PSS; buffer layer; OFET; OTFT
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| E-Mail |
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