| 학회 | 한국재료학회 |
| 학술대회 | 2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 | 13권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Effect of plasma treatment to surface of the titanium oxide deposited by plasma enhanced atomic layer deposition |
| 초록 | In order to prevent gas permeation from outside, a good passivation layer is required. Inorganic materials are good for passivation layer because of its high gas diffusion barrier property. TiO2 is a good insulator having good chemical stability and high density but it was not reported for application of passivation layer. Plasma enhanced atomic layer deposition (PEALD) is one of the most promising deposition methods because self-limiting mechanism of ALD can deposit thin films with high quality at low temperatures and precisely control the thickness of deposited films. In this study, we investigated the characteristics of TiOxNy passivation layer including its physical, chemical and water vapor permeability. TiO2 films were treated with a radio frequency direct plasma of CCP type. N2 and reactive gases such as NH3 gas were used as treatment gases. The chemical and physical properties were analyzed by XPS, XRD, HRTEM, AES, RBS. The water vapor permeability was analyzed through water vapor transmission rate (WVTR) analysis. As a result, we can consider plasma treated TiO2 as one of the most suitable passivation films Acknowledgement This work was supported by the Ministry of Commerce, Industry and Energy (MOCIE) National Research Program for 0.1 Tb Non-volatile Memory Development. |
| 저자 | 김웅선, 고명균, 김태섭, 박종완 |
| 소속 | 한양대 |
| 키워드 | passivation; atomic layer deposition; plasma treatment; WVTR |
