| 학회 |
한국화학공학회 |
| 학술대회 |
2000년 봄 (04/21 ~ 04/22, 한양대학교) |
| 권호 |
6권 1호, p.1841 |
| 발표분야 |
재료 |
| 제목 |
III-V족 화합물 반도체의 표면보호막 생성에 대한 표면화학적 연구 |
| 초록 |
We report here the surface chemistry of GaS film evolution in the dry passivation processes using H2S and [t-butyl(GaS)]4 molecule as the sulfur source. At a surface temperature of 100K, dissociative adsorption of H2S occurs to form As-H bonds on the both GaAs(001)-(2x4) and (4x2) surfaces via a molecularly adsorbed precursor. In the thermal desorption of H2S, the two esorption features are resolved and assigned to the recombinative desorption of mercaptan (HS-) species which are bound to submonolayer surface. After several repeated cycles of H2S exposure at 100K followed by annealing to 700K, saturation sulfide coverage is achieved. Only sulfur atoms were available for post-hydrogenation on this sulfide layer. Formation of a clean and thick GaS film from deposition of [t-butyl(GaS)]4 at a surface temperature of 650K was verified with AES. Betha-hydride elimination of the t-butyl ligands occurred at a surface temperature of 650K that released both iso-butylene and hydrogen. As a multilayer of GaS was deposited, the LEED pattern changed to (1x1) of which the lattice constant is 4% smaller than that observed for the (2x1), (4x2), and (2x4) reconstructions.
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| 저자 |
정찬화, S. I. Yi, W. Henry Weinberg
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| 소속 |
성균관대 |
| 키워드 |
Sulfur Passivation; GaAs; Surface Chemistry; CVD; H2S; [t-butyl(GaS)]4
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| E-Mail |
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| 원문파일 |
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