| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | 제29회 신소재 심포지엄 - 2차원 소재/소자 응용 |
| 제목 | Characteristics of Layered Tin Disulfide Deposited by Atomic Layer Deposition |
| 초록 | Since the discovery of single layer graphene (SLG) was reported, there have been extensive research activities in 2-dimensional (2D) materials. Graphene has high carrier mobility ≥ 1000 cm2/Vs and high transmittance due to the thickness with 0.35 nm. Also, it has high flexibility because of very tightly bonded carbon atoms. However, graphene has a zero bandgap in pristine form without functionalization or structural modification like a ribbon shape, resulting in low on/off ratio. In order to solve these problems, transition metal dichalcogenide (TMDC) has been actively researched as a channel for transistors due to its suitable bandgap. In particular, 2D MoS2 and WS2 are strong candidate materials that circumvent the problems of graphene because MoS2 and WS2 have high mobility and suitable bandgap. However these materials similar to graphene, mechanical exfoliation are the main method to form electric devices. And these methods are not compatible with current integrated circuit manufacturing processes at all. Furthermore, conventional chemical vapor deposition methods are difficult to apply flexible substrate due to its high process temperatures. From the device point of view, future flexible and wearable electronics need higher performance, lower processing temperature, less power consumption and flexibility. Tin disulfide (SnS2) with 2D structure can be a candidate to compete with current 2D materials. The 2D SnS2 has S-Sn-S tri-atomic planar molecular arrangements with weak van der Waals bonding among molecules. The properties of 2D SnS2 with bandgap of 2.1 eV can lead to high performance and low transistors with large Ion/Ioff and high mobility. SnS2 is a semiconducting layered metal dichalcogenide comprising earth-abundant constituents, notably a group IV element (Sn) replacing the transition metal in MoS2, WS2 and related compounds. In this presentation, we will present the properties of 2D SnS2 deposited by atomic layer deposition. |
| 저자 | 전형탁, 최형수, 이승진, 서원덕, 이주현, 박주현, 신석윤, 함기열 |
| 소속 | 한양대 |
| 키워드 | <P>2D; Layred; Tin Disulfide; SnS<SUB>2</SUB>; Atomic layer Deosition</P> |
