| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | Epitaxial growth and characterization of AlxIn1-xSb layers on InSb substrate by LP-MOCVD |
| 초록 | AlxIn1-xSb tertiary alloy is a very attractive material because its band gap can be controlled from 0.18 eV (InSb) to 1.62 eV (AlSb) at room temperature. Moreover, this material has potential applications in a variety of optoelectronic devices such as infrared detectors, light emitting diodes. [1-3] We studied the epitaxial growth of AlxIn1-xSb layers on an InSb (001) substrate by low-pressure metalorganic chemical vapor deposition using tritertiarybutyl aluminium (TTBAl), trimethylindium (TMIn), and trimethylantimony (TMSb) as source materials for Al, In, and Sb, respectively. AlxIn1-xSb layers were grown varying TTBAl/(TTBAl +TMIn) ratio in the range from 0.702 to 0.755 at a growth temperature of 490 ˚C and a TMSb/TMIn ratio of 8.8. It was found that at high TTBAl flow rate conditions, inhomogeneous AlInSb layers and even Al droplets were formed on the surface. This suggests that the excess TTBAl flow rate could cause the non-uniform distribution of Al in the layers and Al agglomeration on the surface at the low growth temperature. [1] R.M. Biefeld, A.A Allerman and M.W. Pelczynski, Appl. Phys. Lett. 68, 932 (1996) [2] S.R. Kurtz, A.A. Allerman and R.M. Biefeld, Appl. Phys. Lett. 70, 3188 (1997) [3] M.K. Saker, D.M. Whittaker, M.S. Skolnick, C.F.McConville, C.R. Whitehouse, S.J. Barnett, A.D. Pitt, A.G. Cullis and G.M. Williams, Appl. Phys. Lett. 65 1118 (1994) |
| 저자 | 윤의준1, 박용조2, 금대명1, 박세훈1, 박환열1 |
| 소속 | 1서울대, 2차세대융합기술(연) |
| 키워드 | AlInSb; InSb; MOCVD; optoelectronic devices; TTBAl |
