| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Influence of In-situ Molecular Oxygen Incorporation on Electrical Property of Atomic Layer Deposited Zinc Oxide Thin Films |
| 초록 |
Zinc oxide (ZnO) has drawn a significant attention as a transparent oxide semiconducting material for its several advantages and applicability in the optical, optoelectronic devices. The properties of ZnO thin films can be tuned by controlling the anionic vacancy or by intentional impurity doping depending on different applications. Here, the possibility of modulated electrical property of ZnO thin films was investigated in terms of reduction in carrier concentration by employing molecular oxygen (O2) pulse during the atomic layer deposition cycle. Conducting ZnO thin films were deposited using diethylzinc (DEZ) and deionised water (H2O) as the two conventional Zn and oxygen (O) precursors at 170 °C with a carrier concentration of ~1019 cm-3. A consecutive molecular O2 exposure after the H2O pulse was highly efficient to reduce the carrier concentration of ZnO films by 3-4 orders of magnitude (~1015 cm-3) whereas the minimal effect on the electrical property was observed for the DEZ pulse followed by an O2 pulse. Detailed structural, optical, chemical and electrical characterizations were carried out for the O2-modulated ZnO thin films. The reduction in carrier concentration also was shown at the ALD substrate temperature of 120 °C with the controlled O2 pulse. Furthermore, the ZnO thin films with decreased carrier concentration was demonstrated successfully as a channel layer in back-gated thin film transistors. |
| 저자 |
Soumyadeep Sinha1, Jaeyeong Heo2
|
| 소속 |
1Department of Materials Science and Engineering and Optoelectronics Convergence Research Center, 2Chonnam National Univ. |
| 키워드 |
Atomic layer deposition; Electrical property; Molecular oxygen; Thin film transistor; Zinc oxide
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| E-Mail |
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