| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 가을 (10/06 ~ 10/08, 대구컨벤션센터(EXCO)) |
| 권호 |
40권 2호 |
| 발표분야 |
Korea-Taiwan Joint Symposium: Macromolecular Assembly and Nanostructured Polymers (영어발표) |
| 제목 |
Deep Nanoscale Polymer Self-assembly for Modulating Memory and 2D Channel Materials |
| 초록 |
This talk will mainly discuss how a bottom-up approach based on block copolymer self-assembly can resolve the chronic issues of power consumption and reliability issues in nonvolatile memories such as phase change memory or resistive memory devices. For example, we incorporated the SiOx nanostructures at the interface between a resistive switching material (NiO) and a top electrode (Pt/Ti) to control the locations where conductive filaments were formed. The self-assembled SiOx in unipolar NiO resistive memories can extensively modify the electric field distributions to significantly improve the reliability of switching behavior. This talk will also demonstrate the reliable doping and modulation of 2D semiconductors with preserving a high carrier mobility, which can be achieved using the self-assembled SiOx nanostructures and plasma treatment. |
| 저자 |
정연식 |
| 소속 |
KAIST |
| 키워드 |
polymer; self-assembly; memory; 2D materials
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| E-Mail |
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