| 초록 |
In recent years, two-dimensional materials such as graphene and transition metal dichalcogenides(TMDCs) have attracted great attention due to their excellent electronic and optical properties. These 2D materials have potential for use in nanoelectronics, photonics, sensor, and optoelectronics. Among the various methods to synthesis, large area and high quality monolayer 2D materials can be obtained by the chemical vapor deposition (CVD) method. In CVD process, the most important factor is the nucleation of crystals. To promote the formation of large size single crystal domains, complicated growth techniques or surface treatment methods are critical for controlling nucleation processes. In this research, we have synthesized a high quality MoSe2 monolayer focusing on changing the factors of CVD process such as H2 flow rate and process temperature. These results demonstrate the impact of various parameters that affect crystal nucleation density during the synthesis process of MoSe2. |
