| 학회 |
한국화학공학회 |
| 학술대회 |
2010년 가을 (10/21 ~ 10/22, 대전컨벤션센터) |
| 권호 |
16권 2호, p.2097 |
| 발표분야 |
재료 |
| 제목 |
Fabrication and Characterization of N-doped ZnO Nanofilms by Plasma Enhanced Atomic Layer Deposition |
| 초록 |
Nitrogen-doped ZnO films were prepared by plasma enhanced atomic layer deposition (PEALD). The films were grown temperature at 220˚C with varying the R.F power from 0 to 300 W under (N2+O2) mixing gas discharges. Structural, optical, electrical properties of these films were investigated with X-ray diffraction (XRD), photoluminescence (PL) and Hall-effect measurements, respectively. The N-doped ZnO nanofilms were grown along the [0002] direction in preference. Only sharp and strong UV emission at 370nm from room-temperature PL spectra was observed from all the ZnO nanofilms. The enhancement of conductivity in N-doped ZnO was attributed to an increase in nitrogen content in film. With, increasing the R.F power the mobility of the ZnO film increased but the resistance of the film decreased. |
| 저자 |
김진환, 최한석, Soumen Das, 한윤봉
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| 소속 |
전북대 |
| 키워드 |
ZnO nanofilm; N-doped ZnO; PEALD
|
| E-Mail |
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| 원문파일 |
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