| 학회 | 한국고분자학회 |
| 학술대회 | 2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 | 40권 1호 |
| 발표분야 | 분자전자 부문위원회 II |
| 제목 | Understanding the Impact of Device Geometry on Operation of Coplanar Gated Graphene Transistors |
| 초록 | In this manuscript, our intension is to analysis delay of phase angle and change of charge density by different geometry factor; namely, the switching speed of the coplanar-gated graphene FETs should be changed by the different geometry factor even when device mobility of the semiconductor is almost same value; it is the geometry factor that would determine the frequency limits for these type of devices. |
| 저자 | 김범준1, 이무형2, 강문성2, 조정호1 |
| 소속 | 1성균관대, 2숭실대 |
| 키워드 | electrolyte-gated graphene transistors; coplanar-gated geometry; geometry factor; electrochemical impedance analysis |
