| 초록 |
Cu(In, Ga)Se2 (CIGS) solar cell shows highest conversion efficiency among thin film solar cells. ZnO layer for CIGS solar cell should have high transmittance and conductivity. RF sputtering is commonly used process for ZnO film. Depositing ZnO film in alternative, non-vacuum process can be advantageous for mass production and cost reduction. In this study, ZnO film was formed through electrodeposition, which is non-vacuum process. In ZnCl2, KCl solution at 80℃, negative potential (-) was applied to Mo/CIGS/ZnS working electrode. Experimental parameters are controlled as follow; concentration of ZnCl2 is from 0.005mol/l to 0.5mol/l, applied potential is from -0.7V to -1.1V (vs Ag/AgCl reference electrode), and deposition time is from 5min to 30min. Conductivity of deposited ZnO film was measured and Morphology and thickness were observed by SEM. Formation of ZnO film which has 1㎛ thickness was confirmed at -0.8V potential and 4.7C total charge passed. |
