| 초록 |
The photolithographic technology is now attempting to extend its resolution limit by further reducing the exposure wavelength to 157 nm of F2 excimer lasers. At this short wavelength, the material selection is very limited; only fluoropolymers and silsesquioxane are transparent. We synthesized new resists based on polysilsesquioxane. They have high glass transition temperature because of their crosslinked backbone and are thermally stable. Because of their crosslinked nature, we would expect that these polymers would not be soluble in most organic solvents. But, low molecular weight polymers of these structures are soluble in most organic solvents. They showed high transparency at 157 nm and good etch resistance.
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