| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | 특별심포지엄5. 차세대 디스플레이 기술을 위한 나노/마이크로 LED 심포지엄-오거나이저: 이인환(고려대), 홍영준(세종대) |
| 제목 | Fabrication of transferable and deformable semiconductor light-emitting diodes via graphene-based epitaxy |
| 초록 | High-resolution, flexible solid-state lighting sources have changed landscape of display technology.[1,2] Among many solid-state materials, semiconductor is undoubtedly an ideal light source material.[3] However, the rigid, brittle property of semiconductor thin film make it difficult in use of flexible lighting panels or displays. Sub-strates have been also an important issue for endowing the flexibility.[4] Recent paradigm shift of substrate from single crystal wafers to soft materials has opened the floodgates for flexible electronics.[5] Owing to excellent electrical, optical, and mechanical properties, two-dimensional atomic layer (e.g., graphene, hexagonal BN, MoS2, etc.) with few-atomic thickness has great potential for the use as flexible epitaxial substrates.[6] In this talk, the confined epitaxy of semiconductor nanowire (or microrod) arrays on graphene is presented for fabricat-ing miniatured micro-scale lighting source arrays that are flexible and transferable. First, we demonstrate the covalent epitaxy of microrod light-emitting diodes (LEDs) for micro-display applications.[7] Then, van der Waals and remote epitaxy of semiconductor nanowire and/or microrod heterostructures on graphene are pre-sented. The use of world thinnest substrate, that is single-layer graphene, is demonstrated for the epitaxy of ver-tical semiconductor nanowires.[8] We further deal with epitaxial integration of semiconduc-tor/graphene/semiconductor double heterostructures.[9] The method for position-controlled epitaxy on graphene is presented as well.[10] Finally, the remote epitaxy that enables the copy – paste of crystallographic registration of wafer to overlayer across graphene, is introduced for homo- and heteroepitaxy with the cases of ZnO on ZnO and GaN, respectively.[11,12] As the practical device applications of remote epitaxy, the microrod LEDs on graphene are demonstrated, which are indeed transferable and deformable.[13] We also discuss the challenges and opportunities of graphene substrates and epitaxy of microrod toward future flexible optoelectronics and dis-plays technology. References [1] H. W. Choi, C. W. Jeon, M. D. Dawson, “High-resolution 128 × 96 nitride microdisplay” IEEE Electron Dev. Lett. 25, 277–279 (2004). [2] S. Y. Lee, K. I. Park, C. Huh, M. Koo, H. G. Yoo, S. Kim, C. S. Ah, G. Y. Sung, K. J. Lee, “Water-resistant flexible GaN LED on a liquid crystal polymer substrate for implantable biomedical applications” Nano Energy 1, 145–151 (2012) [3] S. Nakamura, “The Roles of Structural Imperfections in InGaN-Based Blue Light–Emitting Diodes and Laser Diode” Science 281, 956–961 (1998) [4] J. A. Rogers, T. Someya, Y. G. Huang, “Materials and Mechanics for Stretchable Electronics” Science 327, 1603–1607 (2010) [5] C. H. Lee, Y. J. Kim, Y. J. Hong, S. R. Jeon, S. Bae, B. H. Hong, G. C. Yi, “Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films” Adv. Mater. 23, 4614–4619 (2011) [6] K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes” Nature, 457, 706–710 (2009) [7] Y. J. Hong, C.-H. Lee, J. Yoo, Y.-J. Kim, J. Jeong, M. Kim, G.-C. Yi, “Emission color-tuned light-emitting diode mi-croarrays of nonpolar InxGa1–xN/GaN multishell nanotube heterostructures” Sci. Rep. 5, 18020 (2015) [8] Y. J. Hong, W. H. Lee, Y. P. Wu, R. S. Ruoff, T. Fukui, “van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene” Nano Lett. 12, 1431–1436 (2012). [9] Y. J. Hong, J. W. Yang, W. H. Lee, R. S. Ruoff, K. S. Kim, T. Fukui, “Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs” Adv. Mater. 25 (47), 6847–6853 (2013) [10] Y. J. Hong and T. Fukui, “Controlled van der Waals Heteroepitaxy of InAs Nanowires on Carbon Honeycomb Lattic-es” ACS Nano 5, 7576–7584 (2011) [11] J. Jeong, K. A. Min, B. K. Kang, D. H. Shin, J. Yoo, W. S. Yang, S. W. Lee, S. Hong, Y. J. Hong, “Remote heteroepi-taxy across graphene: Hydrothermal growth of vertical ZnO microrods on graphene-coated GaN substrate” Appl. Phys. Lett. 113, 233103 (2018) [12] J. Jeong, K. A. Min, D. H. Shin, W. S. Yang, J. Yoo, S. W. Lee, S. Hong, Y. J. Hong, “Remote homoepitaxy of ZnO microrods across graphene layers” Nanoscale 10, 22970–22980 (2018) [13] J. Jeong et al. "Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wa-fer recycle" Sci. Adv. (in revision) |
| 저자 | 홍영준 |
| 소속 | 세종대 |
| 키워드 | <P>remote epitaxy; GaN microrod; graphene; light-emitting diodes; transfer</P> |
