| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Kesterite Cu2ZnSnS4 (CZTS) Thin Film using Single Target Sputtering and H2S Sulfurization Process |
| 초록 | As for an alternative thin film light absorber layer to chalcopyrite CuInGaSe(S) (CIGS), keterite Cu2ZnSnS4 (CZTS) thin film was prepared by a simple process - sputtering single quaternary target – in conjunction with H2S sulfurization and its optical and physical properties was characterized. This facile preparation method is much efficient because other reported methods such as sequential metal layer stacking or co-sputtering of binary targets are complicated. Also, effect of substrate temperature was studied to attain more stoichiometric CZTS thin film. Single quaternary sputtering target fabricated by powder mixing, pressuring, and sintering process. 500°C sintering temperature was chosen to attain over 90 % of ideal value, which is required for the sputtering process. X-ray diffraction and Raman analysis revealed out that CZTS film contains CZTS phases with unwanted secondary phases such as SnS or SnS2. However, these phases significantly disappeared with increasing substrate temperature during deposition. Critical substrate temperature affects the secondary phase formation and composition turned out to be around 300°C. Optical bandgap energy, mobility, resistivity, and carrier concentration were 1.44eV, 5.32 cm-3/V•sec, 1.2E-1 Ω•cm and 1.29E17 cm-3, respectively. These values support that this simple and facile single quaternary target sputtering is a suitable for a CZTS absorber layer formation. “이 논문은 2014년도 정부(미래창조과학부)의 재원으로 한국연구재단-나노·소재기술개발사업의 지원을 받아 수행된 연구임”(2009-0082580) |
| 저자 | 최문석, 유동준, 최창환 |
| 소속 | 한양대 |
| 키워드 | 박막태양전지; CZTS; CIGS |
