| 초록 |
Transferrable, bright, and thin micro GaN LEDs and their arrays on flexible substrate were presented. To obtain high performance, a high-temperature process (i.e., 500 ºC) for ohmic contact enhancement was performed on sapphire substrate. Exposing the sapphire and GaN interface to a laser (KrF, YaG), the GaN layer is lifted off from the sapphire substrate and can be picked up and transferred to a foreign substrate. LEDs fabricated via this unconventional technique show high efficiency and luminescence compared to thin film organic LEDs. The schemes presented here require only interconnect metallization to be performed on the final substrate where devices are printed, thereby minimizing the need for any specialized processing technology, with important consequences in large area electronics for display systems, flexible/stretchable electronics or other non-wafer based devices and bio-implantable devices. |
