| 초록 |
On hydrophobicity-controlled PS/SiO2 dielectrics, discernible crystal structures of seeding PTCDI-C13 were generated via controlling the post-annealing at different temperatures. PTCDI-C13 OFETs could be optimized. PTCDI-C13 thin films deposited on hydrophobic PS-coated and PS brush-SiO2 dielectrics showed preferred crystal layers with an increase in annealing T. Interestingly, PTCDI-C13 films developed on the PS brush layer (ca. 5 nm thick) showed the highest mobilities (up to 0.4cm2/Vs) than other PS treated systems (with 20 nm thick PS coating layers). Based on AFM and GIXD analyses, the sudden drop of field-effect mobility of PTCDI-C13 OFETs on the physisorbed PS (20nm thick)-coated SiO2 dielectric system (held above glass transition T of PS) is mainly related to the subsidence of PTCDI-C13 crystals into the PS layer, unlike highly ordered crystals on the chemisorbed ultra-thin PS layer (5 nm thick) on the SiO2 surface. |
