| 초록 |
We report on the fabrication and applications of SWCNT/SnO2 nanowire (NW) heterojunction device arrays on flexible polyimide substrates. The heterojunction diode showed a rectifying behavior with a rectification ratio of 4.6x103 at ± 1 V and 6.7x103 at V = ± 1.5 V, respectively. We also demonstrated successful AC full-wave rectification behaviors via fabricating full-wave bridge circuit of heterojunctions. In addition, we also exhibited high sensitivity of such formed heterojunction devices to UV light and humidity. This work suggests the potential application of p-n heterojunction consisting of SWCNTs and SnO2 NWs to various electronic, optoelectronic and sensor devices. |
