| 초록 |
Logic inverters consisting of n-type FETs and resistors with SnO2 nanowire channels were fabricated on films of the elastomer poly-dimethylsiloxane, pre-strained and flattened into planar sheets from initial, pre-formed hemispherical shapes. Upon release, thin and narrow interconnects between individual devices in the arrays absorb induced strain by buckling into non-planar sinusoidal shapes, to allow full recovery of the surfaces to their original convex geometries. This work shows, more generally, that nanowire devices with both conventional and unusual designs can be integrated into overall systems with irregular, non-planar layouts, easily deformed in reversible fashion without any measurable alteration in electrical characteristics. The results suggest potential applicability of nanowire technologies in systems of tissue-matched implantable electronics for mounting directly on human organs or of sensor skins for integration with robotic manipulators. |
