| 초록 |
Chemical vapor deposition (CVD) using Cu catalyst is the most possible way for producing large-size graphene monolayer. It has been a great challenge to prepare high quality graphene to improve graphene properties since graphene from CVD method usually has grain boundaries which degrade its electrical properties. Recently, centimeter-size single crystal graphene has been synthesized by reducing nucleation density of graphene. However, more practical synthesis of single crystal graphene is still desirable for large area application. Here we demonstrate large-area, single crystal graphene sheet with a high carrier mobility of ~12,000 cm2/Vs, using thermal CVD method. We found the structure defects of graphene arestrongly dependent on the catalytic Cu substrate such as grain size, crystal structure and surface condition. |
