| 학회 |
한국화학공학회 |
| 학술대회 |
2021년 봄 (04/21 ~ 04/23, 부산 BEXCO) |
| 권호 |
27권 1호, p.906 |
| 발표분야 |
재료 |
| 제목 |
A Novel CMP (Chemical Mechanical Planarization) Abrasive of Nanocluster colloidal ceria; Surface Topology, Crystallinity, activity, and Oxide Removal rate |
| 초록 |
As the most advanced self-stopping abrasives for the CMP process of semiconductor manufacturing, two types of colloidal ceria abrasives are compared: Nanocluster form of low-crystalline ceria and cubic-fluorite form of high-crystalline ceria. Each average diameter is 108 and 117 nm with standard deviation of 10.3 and 22.5. The nanocluster ceria has spherical and smooth surface with tiny granules (< 5 nm). Quite differently, the cubic-fluorite ceria shows lattice planes and pointed edges. The crystallite size and crystallinity are 4.4 nm and 70.5% for the nanocluster ceria and 45.5 nm and 95.8% for the cubic-fluorite ceria, respectively, which means the nanocluster abrasive may well ameliorate scratch defects in CMP and enhance reliability in semiconductor manufacturing. The Ce3+/Ce4+ representing the surface activity are 48.4 and 39.5 for the nanocluster and cubic-fluorite ceria, respectively, which is associated with the isoelectric point (IEP) at pH = 6 and 9. The RR of each abrasive is measured as 3500 and 2200 Å/min for 0.3 wt% slurry and 8900 and 3400 Å/min for 3.0 wt% slurry. Overall, a novel nanocluster ceria abrasive demonstrates a physically-soft and chemically-active nature giving great potential in CMP processing. |
| 저자 |
김나연, 김준영, 황의석, 정준영, 박인경, 남재도
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| 소속 |
성균관대 |
| 키워드 |
화공재료 |
| E-Mail |
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| 원문파일 |
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