| 초록 |
Organic memory devices have attracted significant scientific interest due to their advantages of the structural flexibility, processability, light weight, and three-dimensional stacking capability. The resistive-type memory cells contain active polymer materials sandwiched between two metal electrodes that efficiently store the data based on the current response to an applied voltage. We explored different D-A polymer structures and summarized the effect of structural factors on the memory characteristics including D/A strength，Relative ratio of D/A moieties，and Morphology. Also, we successfully demonstrated the fabrication of the organic memory devices on flexible substrates with reproducible high performance memory characteristics. The device configuration of organic field effect transistor (OFET) memory devices is the conventional transistors with an additional charge storage layer between a semiconductor layer and gate dielectric layer. Here, we explored the OFET nonvolatile memory devices of Organic n-channel BPI-PTCDI nanowires, which showed a significantly larger memory window than that of thin film. Also, the memory windows were enhanced with a smaller nanowire diameter or more hydrophobic self-assembled monolayer. Our experimental results suggested that organic materials could have potential applications on advanced memory device applications. |
