| 초록 |
Hysteresis can exhibit two different current states at a same voltage, which can correspond to Boolean ‘1’ or ‘0’ respectively, i.e., a special application as memory based on a FET with hysteresis. Up to now, some nonvolatile memories based on single-walled carbon nanotube (SWCNT) FETs have been demonstrated. The basics mechanism in these reported SWCNT-FET based memories is due to charges trapping/ detrapping at the high positive/negative voltages, respectively. We demonstrated a high performance NCNT-FET based nonvolatile memory with a novel structure, by using a conscious designed special passivation layer to realize the memory effect. The passivation layer plays an important role, which ensures good controllability of the number of traps and the stability of charges trapping. The effect of passivation layer on the memory performance was studied in detail |
