| 초록 |
Colloidal quantum dots (CQDs) are compelling semiconductor materials for optoelectronic applications owing to their tunable bandgap, solution-processibility, and ambient stability. Of chief importance is the ability to tune their absorption and emission into the infrared, a region of interest in optical communications, night vision, biological imaging, and infrared photovoltaics. III-V compound semiconductors have been used in the range beyond silicon’s bandgap (1.12 eV), however, highly reactive precursors, high-reaction temperatures, and high-quality vacuum systems for the fabrication limit their applications. Here we introduce CQDs as promising infrared materials that can replace conventional infrared materials including III-V semiconductors. Specifically, we fabricate infrared CQD solar cells that can add extra efficiency to silicon solar cells. We also show the CQD photodetector responding in ~1550 nm with external quantum efficiency of 70%, which can potentially replace the conventional III-V semiconductors used in the SWIR range. |
