| 학회 |
한국공업화학회 |
| 학술대회 |
2015년 봄 (04/29 ~ 05/01, BEXCO (부산)) |
| 권호 |
19권 1호 |
| 발표분야 |
고분자_포스터 |
| 제목 |
Understanding the Impact of Device Geometry on Operation of Coplanar Gated Graphene Transistors |
| 초록 |
In this manuscript, our intension is to analysis delay of phase angle and change of charge density by different geometry factor; namely, the switching speed of the coplanar-gated graphene FETs should be changed by the different geometry factor even when device mobility of the semiconductor is almost same value; it is the geometry factor that would determine the frequency limits for these type of devices. |
| 저자 |
김범준1, 강문성2, 조정호1
|
| 소속 |
1성균관대, 2숭실대 |
| 키워드 |
Chargre density; graphene transistors; impedance analysis; ion-gel
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| E-Mail |
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