| 학회 | 한국재료학회 |
| 학술대회 | 2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 | 13권 2호 |
| 발표분야 | 전자재료 |
| 제목 | Annealing effect of Molybdenum(Mo) electrode on improving interface properties between Moand pentacene |
| 초록 | Contact resistance between Mo electrode and pentacene was studied by Transmission Line Method (TLM). Mo electrode was patterned by photolithography and Pentacene layer of 300Å thickness was vacuum deposited on patterned Mo with a deposition rate of 0.3Å/sec. The Mo electrodes were annealed deposition at 200℃, 400℃, 600℃ and 800℃ for 1 hour before pentacene deposition, and the properties of annealed samples were compared with as-deposited Mo electrode. It was confirmed with XRD and AFM measurements that Mo could be crystallized with annealing temperature of above 400℃ with XRD and AFM measurement. 800℃ annealed Mo gave a lower contact resistance of 11.2MΩcm than as-deposited Mo of 37.8MΩcm. Work function of Mo increased from 4.60eV to 4.80eV with 800℃ annealing and morphology of pentacene on 800℃ annealed Mo was changed densely. Besides, comparing the characteristics of device with 800 ℃ annealed and as-deposited Mo, the former shows better mobility of 1.42×10-2 and on/off ratio of 104 than the latter (mobility: 1.02×10-3, on/off ratio: 103). |
| 저자 | 윤동진, 이시우 |
| 소속 | 포항공대 화학공학과 |
| 키워드 | TLM; contact resistance; pentacene; molybdenum |
