| 초록 |
Chemical vapor deposition is one of the most common processes used to form thin films and metal or ceramic compounds. It is impossible to analyze defects or cracks that occur in the process of thin film growth, non-uniform growth, and proper thin film growth performance analysis. The conventional SiO2 thin film has a dielectric constant of 4.0, which is a problem because it is too high. In this study, a chemical vapor deposition apparatus and in-situ Raman spectroscopy were used to observe the growth behavior of thin films in the CVD process. Then, deposition was carried out by changing the annealing temperature. Also, the difference between field data and normal atmospheric data was compared. |
