| 학회 | 한국고분자학회 |
| 학술대회 | 2005년 봄 (04/14 ~ 04/15, 전경련회관) |
| 권호 | 30권 1호, p.517 |
| 발표분야 | 고분자 합성 |
| 제목 | Synthesis of 2-Hydroxyethyl methacrylate Based Copolymer by Atom Transfer Radical Polymerization and Its Application for Photoresist |
| 초록 | In this study, we tried to get the high-resolution chemically amplified photoresist which had the demanding properties such as high transparency, thermal stability and controlled dissolution in alkali developer. Poly (2-hydroxyethyl methacrylate) (PHEMA) based copolymers with different contents of styrene having controlled molecular weight and low polydispersity by Atom Transfer Radical Polymerization (ATRP). Trimethylsiloxylethyl methacrylate (HEMA-TMS) was prepared by the reaction of HEMA and chlorotrimethylsilane (TMS-Cl). And the copolymer of HEMA with styrene was prepared via ATRP using methyl 2-bromopropionate. And then an acetal typed protecting group (PG) was incorporated for photolithography. The chemical structure and lithographic characteristics of synthesized resists were examined by using instrumental analyses such as FT-IR spectrometer, NMR, GPC and so on. Figure. The route of synthesis for the HEMA based copolymer. |
| 저자 | 심재혁, 김태호 |
| 소속 | 성균관대 |
| 키워드 | atom transfer radical polymerization; resist |
