| 초록 |
In this study, P(VDF-TrFE)(72/28) copolymer 100 nm ultra-thin films were sandwiched between different top and bottom electrodes to form varying memory device architectures such as MFM, MFS, MFIS, MF-PeDOT-M. P-E and C-V measurements were carried out in order to study their remnant polarization, dipole switching time, fatigue and switching current. From P-E studies, MFM device exhibited dielectric-to-ferroelectric hysteresis behavior at and above 11 V and Pr was around 5~7 µC/cm2. MFS and MFIS devices exhibited asymmetric P-E hysteresis. At 500 Hz frequency and a peak voltage of ±15 V, the fatigue loss was around 25% after 105 cumulative cycles. From C-V measurements, we were able to predict the dipole orientation state using MFIS device and the results are reported in detail here. Acknowledgement : This project was supported by The National research program for the 0.1 Terabit Non-volatile Memory Development sponsored by Korea Ministry of Commerce, Industry and Energy |
