| 학회 | 한국화학공학회 |
| 학술대회 | 1999년 봄 (04/23 ~ 04/24, 성균관대학교) |
| 권호 | 5권 1호, p.1653 |
| 발표분야 | 재료 |
| 제목 | III-V족 화합물반도체의 산화막 형성 기구에 관한 연구 |
| 초록 | The oxidation of GaAs and AlAs by the decomposition of water hasbeen investigated in ultrahigh vacuum using HREELS, AES, and TPD.We have found thatmolecularly adsorbed water on GaAs and AlAssurfaces has two competing reactionpaths available; eitherdesorption back into the gas phase, or dissociation resultinginIII(Ga or Al)-oxide and III-hydroxide, and arsenic hydride.Recombination of the arsenichydride produces arsine, whichdesorbs and depletes arsenic within the oxide film. Byidentifyingthe various reaction steps that occur (with annealing) after thelow-temperatureadsorption of water on GaAs and AlAs, we are ableto propose a mechanism for theinitial stages of wet oxidation ofIII-V compound semiconductors. We also able tomonitor thediffusion of subsurface AlAs through the multilayer of oxideat temperaturesin excess of 800K. Moreover, it was found thatelectron beam irradiation a partiallyoxidized surface couldincrease the surface oxidation, a result which may haveimplicationsfor an "in-situ" e-beam lithography application. |
| 저자 | 정찬화1, W. J. Mitchell2, S. I. Yi, Evelyn L. Hu, W. Henry Weinberg |
| 소속 | 1Dept. of Chemical Engineering and QUEST, 2Univ. |
| 키워드 | Oxidation; Surface Chemistry; III-V; GaAs; AlAs; HREELS; TPD |
| 원문파일 | 초록 보기 |
